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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PC2723T
1.1 GHz AGC AMPLIFIER FOR DBS TUNER AND MOBILE TELEPHONE
FEATURES
* * * * *
Wide frequency response - fu = 1.1 GHzTYP @ - 3 dB GPMAX. Maximum power gain - GPMAX. = 13 dBTYP Single supply voltage: 5 V, 15 mA TYP. AGC Dynamic range: GCR = 38 dB TYP. @ f = 500 MHz Packaged in 6 pins mini mold suitable for high-density surface mounting.
DESCRIPTION
The PC2723T is a silicon monolithic integrated circuit designed for miniature AGC amplifier. This amplifier realizes Auto gain control with external control circuit. This IC operates up to 1.1 GHz and therefore is suitable for DBS tuner, mobile telephone and other applications. The PC2723T is manufactured using NEC's 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold metallization wirings. These materials can protect the chips from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
ORDER INFORMATION
ORDER NUMBER PACKAGE 6pin mini mold SUPPLYING FORM Embossed tape 8mm wide. 3kp/reel. Pin1, 2, 3 face to perforation side of the tape. MARKING C1M
PC2723T-E3
Remarks To order evaluation samples, please contact your local NEC sales office. (Order number: PC2723T)
PIN CONNECTIONS
(Top View) (Bottom View)
C1M
3
4
1. INPUT 2. GND 3. OUTPUT 4. VCC 5. VAGC 6. INPUT
4
3
2
5
5
2
1
6
6
1
Caution: Electro-static sensitive device
Document No. P10922EJ2V0DS00 (2nd edition) (Previous No. ID-3258) Date Published November 1995 P Printed in Japan
(c)
1995
PC2723T
ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage AGC Control Voltage Total Power Dissipation Operating Temperature Storage Temperature Input Power SYMBOL VCC VAGC PD Topt Tstg Pin RATING 6.0 6.0 280 -40 to +85 -55 to +150 0 UNIT V mA mW C C dBm TA = +25 C TA = +25 C TA = +25 C Mounted on double sided copper 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85 C) CONDITION
RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage Operating Temperature SYMBOL VCC Topt MIN. 4.5 -40 TYP. 5 +25 MAX. 5.5 +85 UNIT V C
ELECTRICAL CHARACTERISTICS (TA = 25 C, VCC = 5 V, ZS = ZL = 50 )
PARAMETER Circuit Current Maximum Power Gain Noise Figure Upper Limit Operating Frequency AGC Dynamic Range Isolation Input Return Loss Output Return Loss Maximum Output SYMBOL ICC GPMAX. NF fu GCR ISL RLin RLout PO(sat) MIN. 11 9.5 - 0.8 33 32 9 2 -5 TYP. 15 13 11 1.1 38 37 12 4 -2 MAX. 19 14.5 13.5 - - - - - - UNIT mA dB dB GHz dB dB dB dB dBm No signal f = 500 MHz f = 500 MHz, at GPMAX. 3 dB down below flat gain f = 0.1 GHz at GPMAX. f = 500 MHz, VAGC = 0 to 5.0 V f = 500 MHz, at GPMAX. f = 500 MHz, at GPMAX. f = 500 MHz, at GPMAX. f = 500 MHz, Pin = -5 dBm at GPMAX. CONDITION
2
PC2723T
PIN DESCRIPTIONS
Pin No. 1 Symbol IN Assignment Input bypass pin Functions and Explanation Must be connected bypass capacitor (e.g. 1 500 pF) to minimize ground impedance. Must be connected to the system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. (Track length should be kept as short as possible) Must be coupled with capacitor (e.g. 1 500 pF) for DC cut. Supply voltage 5.0 0.5 V for operation. Must be connected bypass capacitor (e.g. 1 500 pF) to minimize ground impedance. Can be used for auto gain control. The control can be governed by supply voltage to this pin. AGC performance can be adjustable by RAGC value. (e.g. 15 ). Input frequency from an external VCO output. Must be coupled with capacitor (e.g. 1 500 pF).
2
GND
Ground pin
3 4
OUT VCC
Output pin Power supply pin
5
VAGC
AGC control pin
6
IN
Input pin
3
PC2723T
TEST CIRCUIT
VCC VAGC 1 500 pF C5 RAGC 1 500 pF 6 C6 1 500 pF 1 C1 5 43 2 1 500 pF C2 50 OUT 0.68 F C4 1 500 pF C3 1k
Tantalum capacitor
50 IN
INTERNAL BLOCK DIAGRAM
VAGC LEVEL SHIFTER RFOUT LEVEL SHIFTER
RFIN IN (BYPASS) AGC AMP
4
PC2723T
TYPICAL CHARACTERISTICS (TA = +25 C)
ICC - VCC 20 VAGC = 1.0 V No input signal
ICC - Circuit Current - mA ICC - Circuit Current - mA
ICC - Topt 20 VCC = 5.0 V VAGC = 1.0 V No input signal
15
10
5
0
1
2
3
4
5
6
10 -40
-20
0
20
40
60
80
VCC - Supply Voltage - V
Topt - Operating Temperature - C
NF, GP - f 20
GP - Maximum Power Gain - dB GP - Maximum Power Gain - dB
GP - f 20 VCC = 5.0 V VAGC = 1.0 V VCC = 5.0 V VAGC = 1.0 V
15
GPMAX. VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V
15
TA = -40 C
NF - Noise Figure - dB
10
TA = +25 C 10
TA = +85 C
15
5
10
0 -5 0.01
5
5
0.1 f - Frequency - GHz
1.0
3.0
0 0.01
0.1 f - Frequency - GHz
1.0
3.0
GP - VAGC 20 40
GP - f VCC = 5.0 V VAGC = 3.3 V VAGC = 3.6 V 0 VAGC = 3.68 V VAGC = 3.71 V -20 VAGC = 3.8 V -40 -60 0.01
GP - Power Gain - dB
0
RAGC =1 k
15 k
-10
-20 VCC = 5.0 V f = 500 MHz -30 0 2 4 6
GP - Power Gain - dB
10
20
0.1 f - Frequency - GHz
1.0
3.0
VAGC - AGC Control Voltage - V
5
PC2723T
ISL - f 0 VCC = 5.0 V 0 RL in, RLout - f VCC = 5.0 V
-20
RLin - Input Return Loss - dB RLout - Output Return Loss - dB
ISL - Isolation - dB
-10
RLout
-40
-20
RLin
-60
-80 -100 0.01
-30
0.1 f - Frequency - GHz
1.0
3.0
-40 0.01
0.1 f - Frequency - GHz
1.0
3.0
PO - Pin Manual Gain Control 10 f = 500 MHz VAGC = 1.0 V at GPMAX. VCC = 5.5 V -10 VCC = 5.0 V -20 VCC = 4.5 V -30 -40 -40 0
PO - Pin AGC Operation f = 500 MHz VCC = 5.0 V
PO - Output Power - dBm
0
PO - Output Power - dBm
-10 -20
-30
-40 -50 -60
-30
-20
-10
0
10
-40
-20
0
20
Pin - Input Power - dBm
P in - Input Power - dBm
PO(sat) - f
PO - Output Power - dBm IM3 - 3rd Order Intermodulation Distortion - dBm
PO, IM3 - Pin +20 0 -20 -40 -60 -80 -100 -50 Pout
PO(sat) - Saturated Output Power - dBm
5
VCC = 5.5 V 0 VCC = 5.0 V VCC = 4.5 V -5
IM3
-10 0.01
0.1 f - Frequency - GHz
1.0
3.0
-40
-30
-20
-10
0
Pin - Input Power - dBm
6
S22 - FREQUENCY
S11 - FREQUENCY
S PARAMETER (VCC = 5.0 V)
.47
0.1
0.1
0.49 0.48 0.01 0.02 RD LOAD A W 0.49 0.48 0.01 0.02 RD LOAD WA
0 0 0 0
0.2
WAVELE NGTH S 0.01 0.02 TOWARD 0.49 0.0 GENE 0.48 3 RA 0 0.4 O REFLECTION COEFFCIENT IN 0.0TOR 3 6 7 DEG 0.0 THS T NGLE OF 4 G 0.4 REE EN 160 A 0.4 0 4 EL - S 6 0.0 AV W
0.1
0.1
0.2
0.3
5 0.4 5 0.0 0. 06 40 0. -1
15
0.2
44
5 0.4 5 0.0 0. 06 40 0. -1
-1
T NEN PO
0.1
0.3
44
0.1
-1
50
WAVELE NGTH S 0.01 0.02 TOWARD 0.49 0.0 GENE 7 0.48 3 RA 0.4 0.4 O REFLECTION COEFFCIENT IN 0.0TOR 3 6 7 DEG 0.0 THS T NGLE OF 4 G 0.4 REE EN 160 A 0.4 0 4 EL - S 6 0.0 AV W
0
0.0 0.4 5 5
0. 06
0.3
50
15
0.2
0
0.
44
0.0 0.4 5 5
0.
07
0.
07 0. 3 4 0. 0 13
)
4
0.3
0. 0. 06 44
0.
(
4
43 0 13
-1
0.2
-1
NE GA T
0.4 02 .08 0 00 .43 0. 07 30
0.4 0.0 2 8 0 00 .43 0. 07 30
NE GA T
0.
.08
T EN ON
T EN ON
5
T NEN PO OM EC NC TA X AC - J-- RE --ZO E IV
(
5 0.
POS 14 ITIV 0 ER EA CT +A -- JX NCE ZO-- CO M P
)
0.2
)
0.3
0. 5
M CO CE AN CT JX- EA - --O R -Z E IV
(
0.4
POS 14 ITIV 0 ER EA CT +A -- JX NCE ZO-- CO M P
(
)
0.
4
0
0.
0.
4
0.3
0
0.
5
0.4
2
12
12 0
0
8 0.0 2 0.4 20 1
0
-
0.1 G
-1 2
0.6
9 0.0 1 0.4
0.4 1 0.0 9
0.4
0.10 0.40 110
0.40 0.10 -11 0
-11 0
0.40 0.10
0.7
0.5 0.6
0.4 1 0.0 9
0.6
0.6
.09
1 0.4
0.6
0.10 0.40 110
0.7
0.7
0.5
0.7
(
0.8
0.8
0.7 0.8
0.9
0.8
0.6
0.8
0.11 0.39 100
0.11 0.39 100
(
)
0.7 0.8 0.9 1.0
)
3.0 G
0.9 0.9
0.9
0.12 0.38
0.38 0.39 0.12 0.11 -100
0.01 G
0.12 0.38
-90
0.2
0.2
REACTANCE COMPONENT R ---- 0.2 ZO
-90
REACTANCE COMPONENT R ---- 0.2 ZO
1.0
90
1.0
1.0 1.0
0.38 0.39 0.12 0.11 -100
0.9
1.0
90
0.2
0.2
0.2
0.2
0.4
0.4
0.13 0.37
0.37 0.13
0.4
0.13 0.37
0.37 0.13
0.6
0.6
0.6
1.2
0.4
1.2
0.4
0.4
8
0.4
0.4
0.6
0.
0.8
0
0
1.
1.6
1.
0
1.
0.14 0.36 80
0.36 0.04 -80
0.14 0.36 80
3.0 G
1.4
2.0
1.8
0.36 0.04 -80
1.
0
0.8
1.2 1.2
0.8
0.
0.
0.2
0.
1.4
1.4
8
0.6
0.6
0.6
0.6
8
1. 0
1.4
1.4
0.2
0.8
8
1. 0
1.
1.6 1.8 2.0
0 1.
0
1.4
70
70
-70
0.15 0.35
0.35 0.15
-70
0.15 0.35
1.6
1.6
3.0
0.35 0.15
1.6
1.6
3.0
0
0
0.1 6 0.3 4
4 0.3 6 0.1
0.1 6 0.3 4
4 0.3 6 0.1
-6
0.1 0.3 7 3
3 0.3 7 0.1
0.1
0
3 0.3 7
2.0
4.0 5.0
2.0
-6
1.8
1.8
1.8
1.8
0
6 00
6 00
2.0
2.0
4.0 5.0
0.1 0.3 7 3
50
50
-5
-5
0.
0.
32 18 0.
0.
32 18 0.
0.
3. 0
0
0. 18 32
0. 18 32
3.
3. 0
0
4.0
4.0
6.0
6.0
10
20
50
10
20
50
0 0.2 0 0.3
50
1 0.2 9 0.2
0.2
0.2
2
8 20
0.23 0.27
10
0.24 0.26
0.25 0.25
0
0.26 0.24
-10
0.27 0.2 0.23 8 0.2 2 -20
0.2 00 9 0.2 0.3 1 - 0.2 0 0
0.2
0
50
30 30
10
0. 0. 31 19
0.3
0
1 0.2 9 0.2
30
20
20
19 0. 31 0.
3.
40
10
-4
0
19 0. 31 0.
40
10
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 8 0.2 2 -20
0.2 00 9 0.2 0.3 1 -3 0.2 0 0 0
6.0
-4
4.0
0
10
4.0
0. 0. 31 19
20
6.0
50
20
50
PC2723T
7
PC2723T
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
VCC
C4 C3
VAGC C5
R AGC
OUT
C2
C1
C6
IN
PC2723T
Component List No. C1 to 3 C4 C5 to 6 RAGC Value 1 500 pF 0.68 pF 1 500 pF 1 k
Note (1) 50x50x0.4 mm double copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) q q : Through holes
8
PC2723T
TYPICAL SYSTEM APPLICATION
DBS Tuner Block Diagram
DC AMP DET
1st IF Input
RF Amp
ATT RF Amp
MIX.
IF Amp Sound Visual
From O.D.U.
PC2723T PC2726T
FM DEMO.
VCO
PLL
LPF
900 MHz Band Digital Cellular Block Diagram (5 V System)
1st MIX. 2nd MIX. DEMO. I Q
Low Noise Tr RX
SW
VCO
PLL
PLL
I 0 TX PA Driver F/F 90
PC2723T
Q
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
9
PC2723T
6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit : mm)
0.3 -0.05
+0.1
0.130.1
1
2.8 -0.3 1.5 -0.1
+0.2 +0.2
2
3
0 to 0.1 6 5 0.95 4 0.95 0.8 1.1 -0.1
+0.2
1.9 2.90.2
10
PC2723T
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor (e.g. 1 000 pF) to the VCC pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered in the following recommended conditions. Other soldering methods and conditions than the recommended conditions are to be consulted with our sales representatives.
PC2723T
Soldering method Infrared ray reflow Soldering conditions Package peak temperature: 235 C, Hour: within 30 s. (more than 210 C), Time: 2 times, Limited days: no.* Package peak temperature: 215 C, Hour: within 40 s. (more than 200 C), Time: 2 times, Limited days: no.* Soldering tub temperature: less than 260 C, Hour: within 10 s. Time: 1 time, Limited days: no. Pin area temperature: less than 300 C, Hour: within 3 s/pin. Limited days: no.* Recommended condition symbol
IR35-00-2
VPS
VP15-00-2
Wave soldering
WS60-00-1
Pin part heating
*: It is the storage days after opening a dry pack, the storage conditions are 25 C, less than 65 % RH. Note 1. The combined use of soldering method is to be avoided (However, except the pin area heating method).
For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (IEI-1207).
11
PC2723T
ATTENTION
OBSERVE PRECAUTIONS FOR HANDLING
ELECTROSTATIC SENSITIVE DEVICES
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
14

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